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Box54b = 100 v( min) - bdx53c. collector to base voltage: vcbo = 60 v 2. trans darlington npn 60v 8a 3- pin ( 3+ tab) to- 220. file size: 187kbytes. bdx53b, bdx53c, bdx54, bdx54a, bdx54b. high dc current gain. ecopack specifications are available at: www. hammer drivers, audio amplifiers applications.
collector to emitter voltage: vceo = 60 v 3. the maximum ratings related to soldering conditions are also marked on the inner box label. this electronic component, produced by the manufacturer " savantic ", performs the same function as " silicon npn power transistors ". hammer drivers, audio amplifiers 2. share link : electronic components distributor. 60 v ( mln) - bdx53a. these devices are designed for general− purpose amplifier and low− speed switching applications. emitter c r1 b r2 r1 ≅ 8. mospec semiconductor.
0 adc collector emitter sustaining voltage − @ 100 madc. description: hammer drivers, audio amplifiers applications power liner and switching applications. power derating t, temperature ( ° c) p d, power dissipation ( watts) 60. bdx53a for bdx53b for bdx53c for bdx53 bdx53a for bdx53b for bdx53c c 100ma duty cycle 45v 60 v gov v v vce - 50v tor bdx53 for bdx53a tor bdx53b tor bdx53c 12ma — 12ma — 1. designed for complementary use with bdx54, bdx54a, bdx54b and bdx54c 60 w at 25° c case temperature 8 a continuous collector current minimum hfe of 750 at 3 v, 3 a. plastic medium- power complementary silicon transistors. storage temperature: tsg = - 55 ~ + 150° c applications: 1. bdx53b, bdx53c ( bdx53a datasheet pdf npn), bdx54b, bdx54c ( pnp) www.
the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. bdx54a = 80 v ( mln) - bdx53b. , bdx53a datasheet pdf 45- 100v, 60w) - mospec semiconductor silicon npn power transistors, savantic, inc. junction temperature: tj = 150° c 7. bdx53a datasheet power transistors( 8a. bdx54c * monolithic construction with built- in bdx53a datasheet pdf base- emitter shunt resistor maximum ratings characteristic collector- emitter voltage collector- base voltage emitter- base voltage collector current - continuous peak base current total power dissipation etc= 25° c derate. 8 v v pulsed: pulse duration — 300. base npn / pnp, bdx53a datasheet, bdx53a circuit, bdx53a data sheet : etc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs and other semiconductors.
, 45- 100v, 60w) others with the same file for datasheet: bdx53b, bdx53c, bdx54, bdx54a, bdx54b: download bdx53 datasheet from mospec semiconductor: pdf 193 kb : trans darlington npn 45v 8a 3- pin( 3+ tab) to- 220 others with the same file for datasheet:. collector current: ic = 8 a 5. collector dissipation : pc = 60 w ( tc= 25° c ) 6. pdf download html bdx53 datasheet ( pdf) - mospec semiconductor description power transistors ( 8a. the datasheet is printed for reference information only. , 45- 100v, 60w). 3– 04/ 19 – data without warranty / liability. bdx53a datasheet pdf - savantic part details on this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for bdx53a electronic component. bdx53a datasheet pdf - power innovations limited part details on this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for bdx53a electronic component.
applications hammer drivers, audio amplifiers applications power liner and switching applications features power darlington tr complement to bdx54, bdx54a, bdx54b and bdx54c respectively equivalent circuit 1. login or register hello, { 0} account. download bdx53 datasheet from fairchild semiconductor: pdf 46 kb : power transistors( 8a. bdx53, bdx53a, bdx53b, bdx53c npn silicon power darlingtons - revised september specifications are subject to change without notice. power liner and switching applications. description silicon npn power transistors bdx53a datasheet ( html) - inchange semiconductor company limited bdx53a product details description · with to- 220c package · high dc current gain · darlington · complement to type bdx54/ a/ b/ c applications · power linear and switching applications · hammer drivers, audio amplifiers similar part no. power darlington tr. oem: samsung transistor bdx53a datasheet silicon npn darlington transistor bdx53a datasheet general purpose power applications technical data ( short form) : case: to- 220 ucb - 60v uce - 60v ic - 8a n - 60w f - - hfe - 750 oem: samsung source: samsung cd 1995 datasheet rev. 3kω e march absolute maximum ratings tc = 25° c unless otherwise noted.
download bdx53a datasheet from. − hfe = 2500 ( typ) @ ic = 4. others with the same file for datasheet: bdx53d, bdx53e, bdx53f. manufacturer: mospec semiconductor.
file size: 41kbytes. ecopack is an st trademark. , 45- 100v, 60w) bdx53 datasheet ( html) - mospec semiconductor bdx53 product details 8 ampere darington coplemenetary silicon power transistorsvolts 60watts similar part no. manufacturer: fairchild semiconductor. description: bdx53a datasheet pdf power transistors ( 8a. view bdx53/ a/ b/ c by onsemi datasheet for technical specifications, dimensions and more at digikey. vceo( sus) = 80 vdc ( min) − bdx53b, 54b vceo( sus) = 100 vdc ( min) −. complement to bdx54, bdx54a, bdx54b and bdx54c respectively. - bdx53 more results similar description - bdx53 more results link url. emitter to base voltage: vebo = 5 v 4.